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| NPN Silizium Fototransistor Silicon NPN Phototransistor Vorlaufige Daten / Preliminary Data SFH 3500/FA SFH 3505/FA 2.7 2.3 2.05 R 1.95 2.7 2.4 Chip position 4.5 7.5 3.9 5.5 (3.2) (R 2.8) (3.2) 6.0 5.4 GEO06968 14.7 13.1 2.54 mm spacing -0.1...0.1 3.7 3.3 Cathode/ Collector 4.5 3.9 7.7 7.1 Chip position 8.0 7.4 15.5 14.7 4.5 3.9 2.05 R 1.95 (3.2) (R 2.8) (3.2) 6.0 5.4 GEO06969 4.8 4.4 SFH 3500/FA 4.8 4.4 2.54 mm spacing SFH 3505/FA 4.5 3.9 7.7 7.1 Cathode/ Collector Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group -0.15...0.15 2.7 2.4 1 1998-11-12 SFH 3500/FA SFH 3505/FA Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich Features q Especially suitable for applications from q q q q q von 450 nm bis 1060 nm (SFH 3500/3505) und bei 880 nm (SFH 3500 FA/3505 FA) Hohe Empfindlichkeit Auf PCB aufsetzbar (SFH 3500/FA) oder in PCB einlegbar (SFH 3505/FA) Passend zu IRED SFH 451x, SFH 458x Fur Oberflachenmontage (SMT) geeignet Gegurtet lieferbar q q q q q 450 nm to 1060 nm (SFH 3500/3505) and of 880 nm (SFH 3500 FA/3505 FA) High sensitivity For mounting on pcb (SFH 3500/FA) or in pcb (SFH 3505/FA) Matches IRED SFH 451x, SFH 458x Suitable for surface mounting (SMT) Available on tape and reel Anwendungen q Fertigungs- und Kontrollanwendungen der Industrie q "Messen/Steuern/Regeln" q Lichtschranken fur Gleich- und Wechsellichtbetrieb Applications q A variety of manufacturing and monitoring applications q For control and drive circuits q Photointerrupters Typ Type SFH 3500 SFH 3505 SFH 3500 FA SFH 3505 FA Bestellnummer Ordering Code Q62702-P5031 Q62702-P5050 Q62702-P5032 Q62702-P5051 Gehause Package 5-mm-LED-Gehause (T 1 3/4), klares (SFH 3500/3505) und schwarz eingefarbtes (SFH 3500 FA/3505 FA) EpoxyGieharz, Anschlusse (SFH 3500/3500 FA gebogen, SFH 3505/3505 FA gerade) im 2.54-mm-Raster (1/10''), Kathodenkennzeichnung: siehe Mazeichnung. 5 mm LED package (T 1 3/4), clear (SFH 3500/3505) and black-colored (SFH 3500 FA/3505 FA) epoxy resin, solder tabs (SFH 3500/3500 FA bent, SFH 3505/3505 FA straight) lead spacing 2.54 mm (1/10''), cathode marking: see package outline. Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Symbol Symbol Wert Value - 40 ... + 85 35 50 Einheit Unit C V mA Top; Tstg VCE IC Semiconductor Group 2 1998-11-12 SFH 3500/FA SFH 3505/FA Grenzwerte Maximum Ratings (cont'd) Bezeichnung Description Kollektorspitzenstrom, =10 s Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S=10% von Smax Spectral range of sensitivity S=10% of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chip-Flache Dimensions of chip area Halbwinkel Half angle Kapaziat, VCE = 5 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom, VCE = 20 V Dark current Symbol Symbol SFH 350x S max 830 450 ... 1060 Wert Value SFH 350x FA 860 740 ... 1070 nm nm Einheit Unit Symbol Symbol Wert Value 100 7 150 400 Einheit Unit mA V mW K/W ICS VEC Ptot RthJA A LxB LxW 0.55 0.55 1.00 x 1.00 13 10 3 (< 200) mm2 mm x mm Grad deg. pF nA CCE ICE0 Semiconductor Group 3 1998-11-12 SFH 3500/FA SFH 3505/FA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Fotostrom Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V, = 950 nm SFH 3500/05: Ev = 1000 lx, Normlicht/ stand. light A, VCE = 5 V Anstiegs- und Abfallzeit Rise and fall time RL = 1 k, VCC = 5 V, = 950 nm, IC = 1 mA Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCE min1) x 0.3, Ee = 0.5 mW/cm2 1) 1) Symbol Symbol -1 -2 -3 Wert Value -4 -5 Einheit Unit mA IPCE 1.0 ... 2.0 1.6 ... 3.2 2.5 ... 5.0 4.0 ... 8.0 6.3 ... 12.5 5.4 8.6 12 13.5 14 21.5 17 34.0 20 s tr, tf 10 VCEsat 150 (< 200) 150 (< 200) 150 (< 200) 150 (< 200) 150 (< 200) mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group. Photocurrent IPCE = f (VCE), Ee = parameter 9 mA PCE 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 V CE OHF00385 1.0 mW/cm 2 0.5 mW/cm 2 0.25 mW/cm 2 0.1 mW/cm 2 Semiconductor Group 4 1998-11-12 SFH 3500/FA SFH 3505/FA Relative spectral sensitivity Srel = f (), SFH 3500/3505 100 OHF02332 Total power dissipation Ptot = f (TA) 160 mW Ptot 140 120 100 80 60 40 OHF00958 Dark current ICE0= f (TA), VCE = 20 V, E = 0 CEO 10 2 nA OHF02342 S rel % 80 70 60 50 40 30 10 1 10 0 10 -1 20 10 0 400 500 600 700 800 900 nm 1100 20 0 10 -2 0 20 40 60 80 C 100 TA 0 20 40 60 80 C 100 TA Relative spectral sensitivity Srel = f (), SFH 3500 FA/3505 FA 100 OHF02331 Photocurrent IPCE / IPCE25= f (TA), VCE = 5 V PCE 25 1.4 1.2 Directional characteristics Srel = f () OHF01524 PCE 1.6 100 OHF00350 S rel % 80 S rel % 80 70 60 1.0 0.8 60 50 40 30 40 0.6 0.4 20 20 0.2 0 400 600 800 1000 nm 1200 10 0 -25 0 25 50 75 C 100 TA 0 -90 -60 -30 0 30 60 90 Photocurrent IPCE = f (Ee), VCE = 5 V 10 2 mA OHF00346 Dark current ICE0 = f (VCE), E = 0 CEO 10 2 nA OHF00384 Capacitance CCE = f (VCE), f = 1 MHz, E = 0 18 pF 16 14 12 10 OHF00349 PCE CCE 10 1 5 4 3 2 1 10 1 10 0 10 0 8 6 10 -1 10 -1 4 2 10 -2 -3 10 10 -2 10 -1 mW/cm 2 10 0 Ee 10 -2 0 5 10 15 20 25 30 V 35 V CE 0 -2 10 10 -1 10 0 10 1 V 10 2 V CE Semiconductor Group 5 1998-11-12 |
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